Bias-induced insulator-metal transition in organic electronics

@misc{citeulike:827779, abstract = {We investigate the bias-induced insulator-metal (I-M) transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. The I-M transition is explained with the energy levels crossover that minishes the Peierls phase and delocalizes the electron states near the energy gap at the threshold voltage. The energy levels crossover and I-M transition make the device exhibit intrinsic bistable conductance switching with large on-off ratio which has been already confirmed in some experiments.}, author = {Wei, J. H. and Yan, Yijing and Xie, S. J. and Mei, L. M. }, citeulike-article-id = {827779}, eprint = {cond-mat/0609021}, keywords = {biophysics, transport}, month = {Sep}, posted-at = {2006-09-04 15:52:06}, priority = {2}, title = {Bias-induced insulator-metal transition in organic electronics}, url = {http://arxiv.org/abs/cond-mat/0609021}, year = {2006} }

TY - ELEC ID - citeulike:827779 L3 - citeulike-article-id:827779 N2 - We investigate the bias-induced insulator-metal (I-M) transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. The I-M transition is explained with the energy levels crossover that minishes the Peierls phase and delocalizes the electron states near the energy gap at the threshold voltage. The energy levels crossover and I-M transition make the device exhibit intrinsic bistable conductance switching with large on-off ratio which has been already confirmed in some experiments. TI - Bias-induced insulator-metal transition in organic electronics KW - biophysics KW - transport AU - Wei, JH AU - Yan, Yijing AU - Xie, SJ AU - Mei, LM PY - 2006/Sep/01/ UR - http://arxiv.org/abs/cond-mat/0609021 ER -