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vozny's gaas [20 articles]

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  • Adsorption Kinetics of Hydrogen Sulfide and Thiols on GaAs (001) Surfaces in a Vacuum
    J. Phys. Chem. C (20 February 2008)
    by O Voznyy, JJ Dubowski
  • Hydrogen sulfide treatment of GaAs substrate and its effects on initial stage of ZnSe growth
    Journal of Crystal Growth, Vol. 175-176, No. Part 1. (1 May 1997), pp. 593-597.
    by Jun Suda, Ryuji Tokutome, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita
    posted to gaas h2s surface by vozny on 2006-12-28 20:41:03 as **
  • H2S adsorption on the (110) surfaces of III-V semiconductors
    Surface Science, Vol. 344, No. 1-2. (20 December 1995), pp. 1-10.
    by E Dudzik, C Muller, IT Mcgovern, DR Lloyd, A Patchett, DRT Zahn, T Johal, R Mcgrath
    posted to 110 gaas h2s iii-v by vozny on 2006-12-28 20:40:48 as **
  • Thermal and photochemical pathways of H2S on GaAs(100)
    Surface Science, Vol. 382, No. 1-3. (20 June 1997), pp. 79-92.
    by S Conrad, DR Mullins, Xin, Zhu
    posted to gaas h2s passivation surface by vozny on 2006-12-28 20:40:31 as **
  • Theoretical study of the GaAs(110)-(1x1)-H2S surface
    Surface Science, Vol. 402-404 (15 May 1998), pp. 658-662.
    posted to dft gaas h2s passivation surface by vozny on 2006-12-28 20:40:14 as ***
  • Predicting surface free energies with interatomic potentials and electron counting
    Journal of Physics: Condensed Matter, Vol. 17, No. 39. (5 October 2005), pp. 6123-6137.
    by DA Murdick, XW Zhou, HNG Wadley, D Nguyen-Manh
    posted to electron-counting gaas reconstruction surface by vozny on 2006-12-28 16:38:12 as ***
  • Formation of “super” As-rich GaAs(100) surfaces by high temperature exposure to arsine
    Applied Physics Letters, Vol. 60, No. 7. (1992), pp. 856-858.
    by BA Banse, JR Creighton
    posted to 001 as-rich c4x4 desorption gaas h by vozny on 2006-12-08 20:27:36 as ****
  • Effect of contact properties on current transport in metal/molecule/GaAs devices
    Journal of Applied Physics, Vol. 99, No. 2. (2006)
    by Saurabh Lodha, Patrick Carpenter, David B Janes
    posted to gaas gold junction thiol transport by vozny on 2006-12-04 21:49:46 as ****
  • Enhanced current densities in Au/molecule/GaAs devices
    Applied Physics Letters, Vol. 85, No. 14. (2004), pp. 2809-2811.
    by Saurabh Lodha, David B Janes
    posted to gaas gold junction thiol transport by vozny on 2006-12-04 21:43:54 as **
  • Modification of Alkanethiolate Monolayers by Low Energy Electron Irradiation: Dependence on the Substrate Material and on the Length and Isotopic Composition of the Alkyl Chains
    Langmuir, Vol. 16, No. 6. (21 March 2000), pp. 2697-2705.
    posted to gaas thiol by vozny on 2006-12-04 17:32:26 as **
  • Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density
    Thin Solid Films, Vol. 342, No. 1-2. (26 March 1999), pp. 20-29.
    by K Remashan, KN Bhat
    posted to gaas thiol by vozny on 2006-12-04 16:01:01 as **
  • Structure, Bonding Nature, and Binding Energy of Alkanethiolate on As-Rich GaAs (001) Surface: A Density Functional Theory Study
    J. Phys. Chem. B, Vol. 110, No. 46. (4 November 2006)
    by O Voznyy, JJ Dubowski
    posted to 001 ab-initio density-functional dft first-principles gaas siesta thiol thiols by vozny on 2006-12-04 15:29:44 as read
  • First-principles calculations of molecular- and atomic-hydrogen reactions on As-terminated GaAs(100) surfaces
    Physical Review B, Vol. 46, No. 11. (1992), 6915.
    by Yoshiyuki Miyamoto, Shinji Nonoyama
    posted to 001 desorption dft electron-counting gaas h by vozny on 2006-11-15 15:48:52 as *****
  • Surface chemistry of prototypical bulk II-VI and III-V semiconductors and implications for chemical sensing
    Chemical Reviews, Vol. 100, No. 7. (2000), pp. 2505-2536.
    by F Seker, K Meeker, TF Kuech, AB Ellis
  • Gaas Interfaces with Octadecyl Thiol Self-Assembled Monolayer - Structural and Electrical-Properties
    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Vol. 30, No. 12B. (1991), pp. 3759-3762.
    by OS Nakagawa, S Ashok, CW Sheen, J Martensson, DL Allara
  • Formation of alkanethiol and alkanedithiol monolayers on GaAs(001)
    Langmuir, Vol. 22, No. 8. (2006), pp. 3627-3632.
    by Y Jun, XY Zhu, JWP Hsu
  • Coating and passivation of InP-InGaAs devices by organic self-assembled monolayers
    Journal of the Electrochemical Society, Vol. 153, No. 1. (2006), pp. G91-G97.
    by O Dassa, V Sidorov, Y Paz, D Ritter
  • The thermal chemistry of model organosulfur compounds on gallium arsenide (110)
    Surface Science, Vol. 453, No. 1-3. (2000), pp. 83-102.
    by N Camillone, KA Khan, RM Osgood
  • A New Class of Self-Assembled Monolayers - Organic Thiols on Gallium-Arsenide
    Advanced Materials, Vol. 4, No. 9. (1992), pp. 591-594.
    by CD Bain
  • First-principles study of nucleation, growth, and interface structure of Fe/GaAs
    Physical Review B, Vol. 65, No. 20. (22 May 2002), 205422.
    by Steven C Erwin, Sung-Hoon Lee, Matthias Scheffler
    posted to dft fe gaas pes by vozny on 2006-11-08 17:14:46 as **
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