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Error-resistant Single Qubit Gates with Trapped Ions(13 Dec 2006)
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摘要Coherent operations constitutive for the implementation of single and multi-qubit quantum gates with trapped ions are demonstrated that are robust against variations in experimental parameters and intrinsically indeterministic system parameters. In particular, pulses developed using optimal control theory are demonstrated for the first time with trapped ions. Their performance as a function of error parameters is systematically investigated and compared to composite pulses.
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